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TO-247-AD-EP-(H)
Discrete Semiconductor Products

IXTH80N65X2

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD

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TO-247-AD-EP-(H)
Discrete Semiconductor Products

IXTH80N65X2

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTH80N65X2
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]144 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)890 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.59
30$ 8.04

Description

General part information

IXTH80N65X2 Series

When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.

Documents

Technical documentation and resources