Specification	MBR10100CT

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	950 mV

MBR1010 Series

Part	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)
Taiwan Semiconductor Corporation MBR10100	200 mA 500 ns	10 A	150 °C	-55 °C	Schottky	850 mV	100 V	TO-220-2	TO-220AC	Through Hole	100 µA
Taiwan Semiconductor Corporation MBR10100H	200 mA 500 ns	10 A	150 °C	-55 °C	Schottky	850 mV	100 V	TO-220-2	TO-220AC	Through Hole	100 µA
Taiwan Semiconductor Corporation MBR10100CT	200 mA 500 ns		150 °C	-55 °C	Schottky		100 V	TO-220-3	TO-220AB	Through Hole	100 µA	1 Pair Common Cathode	950 mV	10 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 100 V 10A Through Hole TO-220-3

Technical documentation and resources