Discrete Semiconductor Products

SH8K15TB1

NRND

MOSFET 2N-CH 30V 9A 8SOP

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Discrete Semiconductor Products

NRND

MOSFET 2N-CH 30V 9A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8K15TB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Configuration	Operating Temperature	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Package / Case	Package / Case	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature
Rohm Semiconductor SH8K15TB1	2.5 V	2 N-Channel (Dual)	150 °C	8-SOP	MOSFET (Metal Oxide)	8.5 nC	630 pF	30 V	Surface Mount	0.154 in	8-SOIC	3.9 mm	2 W	9 A	Logic Level Gate

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General part information

Mosfet Array 30V 9A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available