Discrete Semiconductor Products

SIL08N02-TP

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TRANS MOSFET N-CH 20V 8A 6-PIN SOT-23 T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 20V 8A 6-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SIL08N02-TP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Micro Commercial Components SIL08N02-TP	-55 °C	150 °C	SOT-23-6L	SOT-23-6	8 A	9.2 nC	20 V	1.8 V 4.5 V	MOSFET (Metal Oxide)	N-Channel	17 mOhm	10 V	Surface Mount	1.5 W	1 V	900 pF

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General part information

N-Channel 20 V 8A (Ta) 1.5W Surface Mount SOT-23-6L

Technical documentation and resources