Discrete Semiconductor Products

FQNL1N50BTA

Obsolete

MOSFET N-CH 500V 270MA TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 270MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	FQNL1N50BTA

Current - Continuous Drain (Id) @ 25°C	270 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	9 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQNL1N50BTA	270 mA	-55 °C	150 °C	30 V	Formed Leads TO-226-3 TO-92-3 Long Body	9 Ohm	1.5 W	TO-92-3	10 V	Through Hole	MOSFET (Metal Oxide)	150 pF	500 V	3.7 V	N-Channel	5.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 270mA (Tc) 1.5W (Tc) Through Hole TO-92-3

Technical documentation and resources