Specification	NVTFWS005N08XLTAG

Current - Continuous Drain (Id) @ 25°C	79 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	82 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	5.3 mOhm
Supplier Device Package	8-WDFNW (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

NVTFWS005N08XL Series

Single N-Channel Power MOSFET 80V, 79 A, 5.3 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Grade	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Qualification
ON Semiconductor NVTFWS005N08XLTAG	79 A	8-PowerWDFN	Surface Mount	-55 °C	175 ░C	28 nC	4.5 V 10 V	8-WDFNW (3.3x3.3)	Automotive	20 V	2.1 V	80 V	82 W	5.3 mOhm	MOSFET (Metal Oxide)	1800 pF	N-Channel	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	-	1	$ 1.98
		10	$ 1.26
		100	$ 0.85
		500	$ 0.68
	Cut Tape (CT)	1	$ 1.98
		10	$ 1.26
		100	$ 0.85
		500	$ 0.68
	Tape & Reel (TR)	1500	$ 0.59
		3000	$ 0.55
		4500	$ 0.53
ON Semiconductor	N/A	1	$ 0.57

Description

General part information

NVTFWS005N08XL Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.