Discrete Semiconductor Products

BUK7Y29-40EX

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MOSFET N-CH 40V 26A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 26A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y29-40EX

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	492 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	37 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Technology	Package / Case	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP BUK7Y29-40EX	10 V	26 A	Surface Mount	20 V	-55 °C	175 ░C	29 mOhm	492 pF	37 W	LFPAK56 Power-SO8	N-Channel	40 V	MOSFET (Metal Oxide)	SC-100 SOT-669	AEC-Q101	Automotive	7.9 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 26A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources