Discrete Semiconductor Products

CMS10(TE12L,Q,M)

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SCHOTTKY DIODE, 40V, 1A, SMD ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

SCHOTTKY DIODE, 40V, 1A, SMD ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	CMS10(TE12L,Q,M)

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	500 ns, 200 mA
Supplier Device Package	M-FLAT
Supplier Device Package [x]	2.4
Supplier Device Package [y]	3.8
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Diodes, 40 V/1 A Schottky Barrier Diode, M-FLAT

Part	Speed	Technology	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Min]
Toshiba Semiconductor and Storage CMS10I30A(TE12L,QM	200 mA 500 ns	Schottky	1 A	SOD-128	360 mV	30 V	Surface Mount	M-FLAT	2.4	3.8	100 µA	150 °C	82 pF
Toshiba Semiconductor and Storage CMS10(TE12L,Q,M)	200 mA 500 ns	Schottky	1 A	SOD-128	550 mV	40 V	Surface Mount	M-FLAT	2.4	3.8	500 µA	150 °C	50 pF	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 40 V/1 A Schottky Barrier Diode, M-FLAT

Technical documentation and resources