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MONOLITHIC POWER SYSTEMS (MPS) MP44018-AGS-P
Integrated Circuits (ICs)

MPQ18021HN-A-AEC1-LF-P

Active
Monolithic Power Systems Inc.

GATE DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, MOSFET, 8 PINS, HSOIC

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MONOLITHIC POWER SYSTEMS (MPS) MP44018-AGS-P
Integrated Circuits (ICs)

MPQ18021HN-A-AEC1-LF-P

Active
Monolithic Power Systems Inc.

GATE DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, MOSFET, 8 PINS, HSOIC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMPQ18021HN-A-AEC1-LF-P
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]2.5 A
Current - Peak Output (Source, Sink) [custom]2.5 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
GradeAutomotive
High Side Voltage - Max (Bootstrap) [Max]115 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH2.4 V, 1 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 C
Package / CaseExposed Pad, 8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
QualificationAEC-Q100
Rise / Fall Time (Typ) [custom]12 ns
Rise / Fall Time (Typ) [custom]9 ns
Supplier Device Package8-SOICE
Voltage - Supply [Max]18 V
Voltage - Supply [Min]9 V
PartGate TypeNumber of DriversPackage / CasePackage / CasePackage / CaseSupplier Device PackageMounting TypeVoltage - Supply [Min]Voltage - Supply [Max]Input TypeDriven ConfigurationOperating Temperature [Min]Operating Temperature [Max]Channel TypeHigh Side Voltage - Max (Bootstrap) [Max]Rise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Logic Voltage - VIL, VIHPackage / Case [y]Package / Case [x]GradeQualification
8-SOIC
Monolithic Power Systems Inc.
MOSFET (N-Channel)
N-Channel MOSFET
2
0.154 in
8-SOIC
3.9 mm
8-SOIC
Surface Mount
9 V
18 V
Non-Inverting
Half-Bridge
-40 C
125 °C
Independent
115 V
12 ns
9 ns
2.5 A
2.5 A
1 V
2.4 V
MONOLITHIC POWER SYSTEMS (MPS) MP44018-AGS-P
Monolithic Power Systems Inc.
N-Channel MOSFET
2
8-SOIC
Exposed Pad
8-SOICE
Surface Mount
9 V
18 V
Non-Inverting
Half-Bridge
-40 C
125 °C
Independent
115 V
12 ns
9 ns
2.5 A
2.5 A
1 V
2.4 V
3.9 mm
0.154 in
Automotive
AEC-Q100
8-SOIC
Monolithic Power Systems Inc.
MOSFET (N-Channel)
N-Channel MOSFET
2
0.154 in
8-SOIC
3.9 mm
8-SOIC
Surface Mount
9 V
18 V
Non-Inverting
Half-Bridge
-40 C
125 °C
Independent
115 V
12 ns
9 ns
2.5 A
2.5 A
1 V
2.4 V
8-SOICE-EP
Monolithic Power Systems Inc.
MOSFET (N-Channel)
N-Channel MOSFET
2
8-SOIC
Exposed Pad
8-SOICE
Surface Mount
9 V
18 V
Non-Inverting
Half-Bridge
-40 C
125 °C
Independent
115 V
12 ns
9 ns
2.5 A
2.5 A
1 V
2.4 V
3.9 mm
0.154 in
Automotive
AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach (Supplied on Cut Tape) 1$ 4.27
10$ 3.74
25$ 3.63
50$ 3.52
100$ 3.41
250$ 3.29
500$ 2.92
1000$ 2.84

Description

General part information

MPQ18021 Series

High-frequency, 100V, half-bridge, N-channel power MOSFET driver. Its low-side and high-side driver channels are controlled independently and matched with a time delay of less than 5ns. Under-voltage lockout (UVLO) on both the high-side and low-side supplies force their outputs low in the case of an insufficient supply. The integrated bootstrap diode reduces the external component count.

Documents

Technical documentation and resources