FDM606P

Obsolete

MOSFET P-CH 20V 6.8A 8MLP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6.8A 8MLP

Technical Specifications

Parameters and characteristics for this part

Specification	FDM606P

Current - Continuous Drain (Id) @ 25°C	6.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SMD, Flat Lead Exposed Pad
Power Dissipation (Max)	1.92 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-MLP, MicroFET (3x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDM606P	8-SMD Flat Lead Exposed Pad	30 nC	MOSFET (Metal Oxide)	20 V	6.8 A	8 V	Surface Mount	1.5 V	-55 °C	150 °C	P-Channel	1.92 W	8-MLP MicroFET (3x2)	30 mOhm	1.8 V 4.5 V	2200 pF
ON Semiconductor FDM606P	8-SMD Flat Lead Exposed Pad	30 nC	MOSFET (Metal Oxide)	20 V	6.8 A	8 V	Surface Mount	1.5 V	-55 °C	150 °C	P-Channel	1.92 W	8-MLP MicroFET (3x2)	30 mOhm	1.8 V 4.5 V	2200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6.8A (Tc) 1.92W (Ta) Surface Mount 8-MLP, MicroFET (3x2)

Technical documentation and resources