JFE150DBVR
ActiveULTRA-LOW-NOISE, LOW-GATE-CURRENT AUDIO N-CHANNEL JFET
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JFE150DBVR
ActiveULTRA-LOW-NOISE, LOW-GATE-CURRENT AUDIO N-CHANNEL JFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JFE150DBVR |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 24 mA, 10 V |
| Current Drain (Id) - Max [Max] | 50 mA |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 24 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-74A, SOT-753 |
| Supplier Device Package | SOT-23-5 |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 2.08 | |
| 100 | $ 1.72 | |||
| 1000 | $ 1.16 | |||
| Texas Instruments | LARGE T&R | 1 | $ 2.08 | |
| 100 | $ 1.72 | |||
| 250 | $ 1.24 | |||
| 1000 | $ 0.93 | |||
Description
General part information
JFE150 Series
The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high-leakage, nonlinear, external diodes.
The JFE150 can withstand a high drain-to-source voltage of 40 V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C. The device is offered in 5-pin SOT-23 and SC70 packages.
The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high-leakage, nonlinear, external diodes.
