Specification	NVMFWS021N10MCLT1G

Current - Continuous Drain (Id) @ 25°C	8.4 A, 31 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.6 W, 49 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	4.9x5.9, 8-SOFL-WF, 5-DFNW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVMFS021N10MCL Series

Single N-Channel Power MOSFET 100 V, 31 A, 23 mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Mounting Type	Grade	FET Type	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package
ON Semiconductor NVMFWS021N10MCLT1G	4.5 V 10 V	850 pF	20 V	4.9x5.9 5-DFNW 8-SOFL-WF	Surface Mount Wettable Flank	Automotive	N-Channel	3.6 W 49 W	8-PowerTDFN 5 Leads	13 nC	3 V	8.4 A 31 A	100 V	MOSFET (Metal Oxide)	23 mOhm	AEC-Q101	-55 °C	175 ░C
ON Semiconductor NVMFS021N10MCLT1G	4.5 V 10 V	850 pF	20 V		Surface Mount	Automotive	N-Channel	3.6 W 49 W	8-PowerTDFN 5 Leads	13 nC	3 V	8.4 A 31 A	100 V	MOSFET (Metal Oxide)	23 mOhm	AEC-Q101	-55 °C	175 ░C	5-DFN (5x6)	8-SOFL

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Single N-Channel Power MOSFET 100 V, 31 A, 23 mΩ

Technical documentation and resources