PSMN033-100HLX

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MOSFET 2N-CH 100V 26A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 26A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN033-100HLX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	27.3 nC
Input Capacitance (Ciss) (Max) @ Vds	3168 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	64 W
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Configuration	Power - Max [Max]	Supplier Device Package	Technology	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PSMN033-100HLX	2 N-Channel (Dual)	64 W	LFPAK56D	MOSFET (Metal Oxide)	Surface Mount	8-LFPAK56 SOT-1205	2.1 V	27.3 nC	Logic Level Gate	26 A	100 V	-55 °C	175 ░C	3168 pF	31 mOhm

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General part information

Mosfet Array 100V 26A (Ta) 64W (Ta) Surface Mount LFPAK56D

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