Discrete Semiconductor Products

SIDR140DP-T1-GE3

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MOSFET N-CH 25V 79A/100A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 25V 79A/100A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR140DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	79 A, 100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 125 W
Rds On (Max) @ Id, Vgs	0.67 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIDR140DP-T1-GE3	PowerPAK® SO-8	8150 pF	Surface Mount	PowerPAK® SO-8DC	6.25 W 125 W	2.1 V	170 nC	MOSFET (Metal Oxide)	-16 V 20 V	0.67 mOhm	4.5 V 10 V	79 A 100 A	25 V	N-Channel	-55 °C	150 °C

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General part information

N-Channel 25 V 79A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources