Discrete Semiconductor Products

AOD32326

Active

30V N-CHANNEL MOSFET

Discrete Semiconductor Products

Active

30V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	AOD32326

Current - Continuous Drain (Id) (Ta)	24 A
Current - Continuous Drain (Id) (Tc)	46 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252
Power Dissipation (Max)	45 W, 6.2 W
Rds On (Max)	6.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Package Name	FET Type	Gate Charge (Max)	Package / Case	Rds On (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Vgs (Max)	Vgs(th) (Max)
Sanken Electric USA Inc. AOD32326	10 V	4.5 V	2500 pF	MOSFET (Metal Oxide)	30 V	TO-252	N-Channel	60 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	6.2 mOhm	6.2 W 45 W	-55 °C	150 °C	46 A	24 A	Surface Mount	20 V	2.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	2500	$ 0.23	<4d

3D models and CAD resources for this part

General part information

N-Channel 30 V 24A (Ta), 46A (Tc) 6.2W (Ta), 45W (Tc) Surface Mount TO-252

Technical documentation and resources