Discrete Semiconductor Products

AOD32326

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30V N-CHANNEL MOSFET

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Discrete Semiconductor Products

Active

30V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	AOD32326

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	45 W, 6.2 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id
Sanken Electric USA Inc. AOD32326	4.5 V 10 V	2500 pF	MOSFET (Metal Oxide)	30 V	TO-252	N-Channel	60 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	6.2 mOhm	6.2 W 45 W	150 °C	-55 °C	Surface Mount	20 V	2.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 24A (Ta), 46A (Tc) 6.2W (Ta), 45W (Tc) Surface Mount TO-252

Technical documentation and resources