Discrete Semiconductor Products

ES1M-TP

Obsolete

DIODE GEN PURP 1KV 1A DO214AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1KV 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	ES1M-TP

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	DO-214AC, SMA
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (HSMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology
Micro Commercial Components ES1M-TP	45 pF	Surface Mount	5 µA	200 mA 500 ns	DO-214AC SMA	1.7 V	DO-214AC (HSMA)	1 A	1000 V	-50 °C	150 °C	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 1A Surface Mount DO-214AC (HSMA)

Technical documentation and resources