Discrete Semiconductor Products

NDC7002N_SB9G007

Obsolete

MOSFET 2N-CH 50V 0.51A SSOT6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 50V 0.51A SSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	NDC7002N_SB9G007

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	510 mA
Drain to Source Voltage (Vdss)	50 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds	20 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Feature	Technology	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NDC7002N_SB9G007	Surface Mount	2 Ohm	2.5 V	50 V	700 mW	SOT-23-6 Thin TSOT-23-6	510 mA	Logic Level Gate	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20 pF	1 nC	SuperSOT™-6	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 50V 510mA 700mW Surface Mount SuperSOT™-6

Technical documentation and resources