Specification	DMT6008LFG-7

Current - Continuous Drain (Id) @ 25°C	60 A, 13 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50.4 nC
Input Capacitance (Ciss) (Max) @ Vds	2713 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.2 W, 41 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

DMT6008LFG Series

60V N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Package / Case
Diodes Inc DMT6008LFG-7	13 A 60 A	4.5 V 10 V	MOSFET (Metal Oxide)	7.5 mOhm	2 V	50.4 nC	-55 °C	150 °C	12 V	60 V	POWERDI3333-8	2.2 W 41 W	2713 pF	N-Channel	Surface Mount	8-PowerVDFN
Diodes Inc DMT6008LFG-13	13 A 60 A	4.5 V 10 V	MOSFET (Metal Oxide)	7.5 mOhm	2 V	50.4 nC	-55 °C	150 °C	12 V	60 V	POWERDI3333-8	2.2 W 41 W	2713 pF	N-Channel	Surface Mount	8-PowerVDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

60V N-Channel Enhancement Mode MOSFET

Technical documentation and resources