Discrete Semiconductor Products

NTB6413ANT4G

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POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.0256 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Discrete Semiconductor Products

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POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.0256 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTB6413ANT4G

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Single N-Channel Power MOSFET 100V, 42A, 28mΩ

Part	Package / Case	Supplier Device Package	Power Dissipation (Max)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTB6413ANT4G	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	136 W	Surface Mount	N-Channel	28 mOhm	42 A	100 V	4 V	MOSFET (Metal Oxide)	51 nC	-55 °C	175 ░C	20 V	1800 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 100 V N-Channel Power MOSFET.

Technical documentation and resources