Discrete Semiconductor Products

RJL5014DPK-00#T0

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MOSFET N-CH 500V 19A TO3P

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Discrete Semiconductor Products

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MOSFET N-CH 500V 19A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	RJL5014DPK-00#T0

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)
Renesas Electronics Corporation RJL5014DPK-00#T0	Through Hole	SC-65-3 TO-3P-3	TO-3P	500 V	1700 pF	400 mOhm	19 A	MOSFET (Metal Oxide)	150 °C	150 W	43 nC	10 V	N-Channel	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 19A (Ta) 150W (Tc) Through Hole TO-3P

Technical documentation and resources