Discrete Semiconductor Products

PMV40UN2R

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PMV40UN2 - 30 V, N-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

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Discrete Semiconductor Products

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PMV40UN2 - 30 V, N-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMV40UN2R

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	635 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	490 mW
Rds On (Max) @ Id, Vgs [Max]	44 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	FET Type
Freescale Semiconductor - NXP PMV40UN2R	MOSFET (Metal Oxide)	12 V	12 nC	SC-59 SOT-23-3 TO-236-3	3.7 A	1.8 V 4.5 V	-55 °C	150 °C	900 mV	Surface Mount	490 mW	TO-236AB	635 pF	30 V	44 mOhm	N-Channel

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General part information

N-Channel 30 V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB

Technical documentation and resources