Specification	FQT4N25TF

Current - Continuous Drain (Id) @ 25°C	830 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.6 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	1.75 Ohm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQT4N25 Series

Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor FQT4N25TF	N-Channel	5.6 nC	5 V	830 mA	SOT-223-4	-55 °C	150 °C	10 V	Surface Mount	1.75 Ohm	2.5 W	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	200 pF	250 V	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQT4N25 Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.