Specification	MBR2030CTL

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	520 mV

MBR2030CTL Series

Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V

Part	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Diode Configuration	Speed	Supplier Device Package
ON Semiconductor MBR2030CTLG	10 A	30 V	5 mA	TO-220-3	520 mV	Schottky	-65 C	175 ░C	Through Hole	1 Pair Common Cathode	200 mA 500 ns	TO-220
ON Semiconductor MBR2030CTL	10 A	30 V	5 mA	TO-220-3	520 mV	Schottky	-65 C	175 ░C	Through Hole	1 Pair Common Cathode	200 mA 500 ns	TO-220

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBR2030CTL Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing