Discrete Semiconductor Products

IXFL32N120P

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DISCMOSFETN-CH HIPERFET-POLAR ISOPLUS264/ TUBE

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Discrete Semiconductor Products

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DISCMOSFETN-CH HIPERFET-POLAR ISOPLUS264/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL32N120P

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	21000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	ISOPLUSi5-Pak™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXFL32N120P	Through Hole	1200 V	-55 °C	150 °C	10 V	N-Channel	340 mOhm	ISOPLUSi5-Pak™	30 V	ISOPLUSi5-Pak™	520 W	21000 pF	MOSFET (Metal Oxide)	360 nC	6.5 V	24 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 43.79
Newark	Each	100	$ 43.69

General part information

N-Channel 1200 V 24A (Tc) 520W (Tc) Through Hole ISOPLUSi5-Pak™

Technical documentation and resources