Discrete Semiconductor Products

SI6433BDQ-T1-GE3

Obsolete

MOSFET P-CH 12V 4A 8TSSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 4A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6433BDQ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Rds On (Max) @ Id, Vgs [Max]	40 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	Package / Case [custom]	Package / Case [custom]	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI6433BDQ-T1-E3	8-TSSOP	0.173 "	4.4 mm	P-Channel	8 V	-55 °C	150 °C	12 V	8-TSSOP	4 A	MOSFET (Metal Oxide)	2.5 V 4.5 V	15 nC	Surface Mount	40 mOhm	1.5 V
Vishay General Semiconductor - Diodes Division SI6433BDQ-T1-GE3	8-TSSOP	0.173 "	4.4 mm	P-Channel	8 V	-55 °C	150 °C	12 V	8-TSSOP	4 A	MOSFET (Metal Oxide)	2.5 V 4.5 V	15 nC	Surface Mount	40 mOhm	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 4A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available