Zenode.ai Logo
Beta
NSVBC115EPDXV6T1G
Discrete Semiconductor Products

NSVBC144EDXV6T1G

Active
ON Semiconductor

NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK AUTOMOTIVE AEC-Q101

Deep-Dive with AI

Search across all available documentation for this part.

NSVBC115EPDXV6T1G
Discrete Semiconductor Products

NSVBC144EDXV6T1G

Active
ON Semiconductor

NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVBC144EDXV6T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSOT-666, SOT-563
Power - Max [Max]500 mW
QualificationAEC-Q101
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSOT-563
Transistor Type2 NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 4000$ 0.08
8000$ 0.07
12000$ 0.06
28000$ 0.06
100000$ 0.05
ON SemiconductorN/A 1$ 0.05

Description

General part information

NSBC144WDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.