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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG11N120CND

Obsolete
ON Semiconductor

IGBT, 43 A, 2.1 V, 298 W, 1.2 KV, TO-247, 3 PINS

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DocumentsDatasheetPackage Drawing-340CK-TO-247-3LD SHORT LEAD+3
TO-247-3 AB EP
Discrete Semiconductor Products

HGTG11N120CND

Obsolete
ON Semiconductor

IGBT, 43 A, 2.1 V, 298 W, 1.2 KV, TO-247, 3 PINS

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-340CK-TO-247-3LD SHORT LEAD+3

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTG11N120CND
Current - Collector (Ic) (Max) [Max]43 A
Current - Collector Pulsed (Icm)80 A
Gate Charge100 nC
IGBT TypeNPT
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]298 W
Reverse Recovery Time (trr)70 ns
Supplier Device PackageTO-247-3
Switching Energy950 µJ, 1.3 mJ
Td (on/off) @ 25°C23 ns, 180 ns
Test Condition10 Ohm, 11 A, 15 V, 960 V
Vce(on) (Max) @ Vge, Ic2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.48
30$ 4.34
120$ 3.72
510$ 3.31
1020$ 2.83
2010$ 2.67
NewarkEach 1$ 6.91
10$ 5.96
25$ 5.00
50$ 4.04
100$ 3.73
250$ 3.42
ON SemiconductorN/A 1$ 3.00

Description

General part information

HGTG11N120CND Series

HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.