Discrete Semiconductor Products

VT10200C-M3/4W

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DIODE ARR SCHOTT 200V 5A TO220-3

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Discrete Semiconductor Products

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DIODE ARR SCHOTT 200V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VT10200C-M3/4W

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage @ Vr	150 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	5 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Diode Configuration	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Vishay General Semiconductor - Diodes Division VT10200C-E3/4W	Schottky	TO-220-3	5 A	1.6 V	5 A	200 V	150 µA	200 mA 500 ns	1 Pair Common Cathode	TO-220-3	Through Hole	-40 °C	150 °C
Vishay General Semiconductor - Diodes Division VT10200C-M3/4W	Schottky	TO-220-3	5 A	1.6 V	5 A	200 V	150 µA	200 mA 500 ns	1 Pair Common Cathode	TO-220-3	Through Hole	-40 °C	150 °C

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General part information

Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3

Technical documentation and resources