Discrete Semiconductor Products

R2000F

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DIODE GEN PURP 2KV 200MA DO41

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Discrete Semiconductor Products

Active

DIODE GEN PURP 2KV 200MA DO41

Technical Specifications

Parameters and characteristics for this part

Specification	R2000F

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	500 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2000 V
Voltage - Forward (Vf) (Max) @ If	4 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type	Speed	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
SMC Diode Solutions R2000F	2000 V	500 ns	Through Hole	Any Speed	200 mA	Axial DO-204AL DO-41	4 V	200 mA	5 µA	Standard	DO-41	150 °C	-55 °C

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General part information

Diode 2000 V 200mA Through Hole DO-41

Technical documentation and resources