Zenode.ai Logo
Beta
DMTH8008LPSQ-13
Discrete Semiconductor Products

DMTH3004LPS-13

Active
Diodes Inc

MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K

Deep-Dive with AI

Search across all available documentation for this part.

DMTH8008LPSQ-13
Discrete Semiconductor Products

DMTH3004LPS-13

Active
Diodes Inc

MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH3004LPS-13
Current - Continuous Drain (Id) @ 25°C145 A, 22 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)136 W, 3.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs3.8 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-16 V, 20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.46
5000$ 0.43
7500$ 0.43
12500$ 0.43

Description

General part information

DMTH3004LFGQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Documents

Technical documentation and resources