Discrete Semiconductor Products

MJE3439G

Obsolete

NPN BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MJE3439G

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15 hFE
Frequency - Transition	15 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	15 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Transistor Type	Package / Case	Supplier Device Package
ON Semiconductor MJE3439G	20 µA	15 hFE	150 °C	-65 °C	500 mV	300 mA	15 W	Through Hole	350 V	15 MHz	NPN	TO-126-3 TO-225AA	TO-126

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The NPN Bipolar Power Transistor is designed for use in line-operated equipment requiring high fT.