Specification	FJE5304D

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	30 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJE5304D Series

NPN Triple Diffused Planar Silicon Transistor

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type
ON Semiconductor FJE5304D	TO-126-3	8	TO-126-3 TO-225AA	4 A	400 V	30 W	100 µA	1.5 V	NPN	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2000	$ 0.71
Newark	Each	1000	$ 0.88
		2500	$ 0.71
		10000	$ 0.69
ON Semiconductor	N/A	1	$ 0.70

General part information

NPN Triple Diffused Planar Silicon Transistor

Technical documentation and resources