Specification	IXFN55N50

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXFN55N50 Series

DiscMSFT NCh HiPerFETs-Std SOT-227B(mini

Part	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)
Littelfuse/Commercial Vehicle Products IXFN55N50	625 W	N-Channel	10 V	500 V	MOSFET (Metal Oxide)	90 mOhm	SOT-227B	55 A	SOT-227-4 miniBLOC	330 nC	4.5 V	-55 °C	150 °C	9400 pF	Chassis Mount	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IXFN55N50 Series

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

Datasheet

Handling and Mounting Littelfuse miniBLOC - SOT227B

Technical Document

UR_QQQX2_E72873_20171208

Document