Specification	CSD16414Q5

Current - Continuous Drain (Id) @ 25°C	100 A, 34 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.2 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	2 V

CSD16414Q5 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	FET Type	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD16414Q5	1.9 mOhm	Surface Mount	25 V	34 A 100 A	3650 pF	2 V	8-PowerTDFN	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	-12 V 16 V	N-Channel	3.2 W	8-VSON-CLIP (5x6)	21 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources