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SOT 23-3
Discrete Semiconductor Products

MMUN2116LT1G

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TRANS PREBIAS PNP 50V SOT23-3

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SOT 23-3
Discrete Semiconductor Products

MMUN2116LT1G

Active
ON Semiconductor

TRANS PREBIAS PNP 50V SOT23-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMUN2116LT1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160 hFE
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]246 mW
Resistor - Base (R1)4.7 kOhms
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Full Reel) 3000$ 0.04
6000$ 0.03
12000$ 0.03
18000$ 0.03

Description

General part information

MMUN2116 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources