Discrete Semiconductor Products

PHP18NQ11T,127

Obsolete

MOSFETS PHP18NQ11T/SOT78/SIL3P

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Discrete Semiconductor Products

Obsolete

MOSFETS PHP18NQ11T/SOT78/SIL3P

Technical Specifications

Parameters and characteristics for this part

Specification	PHP18NQ11T,127

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	110 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	633 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology
Nexperia USA Inc. PHP18NQ11T,127	Through Hole	110 V	TO-220AB	633 pF	90 mOhm	TO-220-3	N-Channel	10 V	21 nC	20 V	175 °C	-55 °C	18 A	79 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 110 V 18A (Tc) 79W (Tc) Through Hole TO-220AB

Technical documentation and resources