Discrete Semiconductor Products

PHP18NQ11T,127

Obsolete

MOSFET N-CH 110V 18A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 110V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP18NQ11T,127

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	110 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	633 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PHP18NQ11T,127	Through Hole	TO-220-3	90 mOhm	18 A	N-Channel	79 W	633 pF	110 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	20 V	TO-220AB	21 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 110 V 18A (Tc) 79W (Tc) Through Hole TO-220AB

Technical documentation and resources