Discrete Semiconductor Products

FW217A-TL-2W

Obsolete

N-CHANNEL POWER MOSFET, 35V, 6A, 39MΩ

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Discrete Semiconductor Products

Obsolete

N-CHANNEL POWER MOSFET, 35V, 6A, 39MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FW217A-TL-2W

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	35 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.2 W
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)

N-Channel Power MOSFET, 35V, 6A, 39mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	FET Feature	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FW217A-TL-2W	470 pF	10 nC	150 °C	2 N-Channel (Dual)	35 V	8-SOIC	MOSFET (Metal Oxide)	4.5V Drive Logic Level Gate	Surface Mount	8-SOIC	3.9 mm	0.154 in	2.2 W	39 mOhm	6 A
ON Semiconductor FW217A-TL-2WX

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

FW217A is an N-Channel Power MOSFET, 35V, 6A, 39mΩ, Dual SOIC8 for General Purpose Switching Device Application.

Technical documentation and resources