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RJK1056DPB-00#J5

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NCH POWER MOSFET 100V 25A 14MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 100V 25A 14MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1056DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 25A 14mohm LFPAK56

Part	Mounting Type	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	FET Type	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation RJK1056DPB-00#J5	Surface Mount	20 V	150 °C	25 A	100 V	65 W	SC-100 SOT-669	N-Channel	MOSFET (Metal Oxide)	14 mOhm	LFPAK	10 V	41 nC	3000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources