Discrete Semiconductor Products

MJE340G

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BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 300 V, 500 MA, 20 W, TO-225AA, THROUGH HOLE

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Discrete Semiconductor Products

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BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 300 V, 500 MA, 20 W, TO-225AA, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	MJE340G

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	300 V

Medium Power NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type
ON Semiconductor MJE340G	100 µA	30	TO-126-3 TO-225AA	TO-126	300 V	20 W	NPN	150 °C	-65 °C	500 mA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NPN Bipolar Power Transistor is useful for high voltage, general purpose applications.

Technical documentation and resources