Specification	NVTYS9D6P04M8LTWG

Current - Continuous Drain (Id) @ 25°C	16 A, 71 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2368 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.9 W, 75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.6 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVTYS9D6P04M8 Series

MOSFET – Power, Single, P-Channel,

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Qualification	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Grade	Vgs (Max)	Technology	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor NVTYS9D6P04M8LTWG	4.5 V 10 V	-55 °C	175 ░C	2368 pF	P-Channel	35 nC	40 V	3.9 W 75 W	AEC-Q101	Surface Mount	16 A 71 A	8-LFPAK	3 V	Automotive	20 V	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205	9.6 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, P-Channel, −40 V, −71 A, 9.6 mΩ

Technical documentation and resources