IXFN120N65X2
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 108 A, 650 V, 0.024 OHM, 10 V, 5 V
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IXFN120N65X2
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 108 A, 650 V, 0.024 OHM, 10 V, 5 V
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN120N65X2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 108 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 225 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 15500 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 890 W |
| Rds On (Max) @ Id, Vgs [Max] | 24 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 45.18 | |
| 10 | $ 33.92 | |||
| 100 | $ 31.22 | |||
Description
General part information
IXFN120N65X2 Series
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources