Discrete Semiconductor Products

MCU60P06-TP

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POWER FIELD-EFFECT TRANSISTOR,

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Discrete Semiconductor Products

Active

POWER FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	MCU60P06-TP

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	5814 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	347 °F
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Micro Commercial Components MCU60N02-TP	10 V	2450 pF	6 mOhm	1.8 V 4.5 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	65 nC	Surface Mount	MOSFET (Metal Oxide)	35 W	1 V	-55 °C	175 ░C	20 V	60 A
Micro Commercial Components MCU60P06-TP	20 V	5814 pF		10 V	P-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK		Surface Mount	MOSFET (Metal Oxide)		3.5 V	-55 °C	347 °F	60 V	60 A	18 mOhm	130 W	75 nC
Micro Commercial Components MCU60N04-TP	20 V	1800 pF	13 mOhm	4.5 V 10 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	29 nC	Surface Mount	MOSFET (Metal Oxide)	1.25 W	2.5 V	-55 °C	150 °C	40 V	60 A

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General part information

P-Channel 60 V 60A (Tc) 130W (Tc) Surface Mount DPAK

Technical documentation and resources