Discrete Semiconductor Products

2N5883G

Obsolete

25 A, 60 V PNP BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

25 A, 60 V PNP BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N5883G

Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20 hFE
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	200 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max)	60 V

25 A, 60 V PNP Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Supplier Device Package	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2N5883G	4 V	60 V	TO-204AA TO-3	200 W	Through Hole	2 mA	25 A	TO-204	TO-3	PNP	4 MHz	20 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.