Discrete Semiconductor Products

RJK0629DPE-00#J3

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NCH SINGLE POWER MOSFET 60V 85A 4.5MOHM LDPAK(S)-(1)/TO-263

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Discrete Semiconductor Products

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NCH SINGLE POWER MOSFET 60V 85A 4.5MOHM LDPAK(S)-(1)/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0629DPE-00#J3

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 60V 85A 4.5Mohm LDPAK(S)-(1)/To-263

Part	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Renesas Electronics Corporation RJK0629DPE-00#J3	MOSFET (Metal Oxide)	20 V	4.5 mOhm	85 nC	100 W	N-Channel	85 A	4.5 V 10 V	60 V	150 °C	Surface Mount	4100 pF	SC-83

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The RJK0629DPE is a Nch Single Power Mosfet 60V 85A 4.5Mohm LDPAK(S)-(1)/To-263.

Technical documentation and resources