Specification	2SB1216S-E

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1 W
Supplier Device Package	TP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

2SB1216 Series

Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type
ON Semiconductor 2SB1216S-H	IPAK TO-251-3 Short Leads TO-251AA	140	Through Hole	100 V	130 MHz	4 A	150 °C	1 W	1 µA	500 mV	TP	PNP
ON Semiconductor 2SB1216S-E	IPAK TO-251-3 Short Leads TO-251AA	140	Through Hole	100 V	130 MHz	4 A	150 °C	1 W	1 µA	500 mV	TP	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SB1216 is a Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single TP/TP-FA for high-Current Switching Application.