Discrete Semiconductor Products

S3D35065D1

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DIODE SIL CARB 650V 35A TO247AD

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Discrete Semiconductor Products

Active

DIODE SIL CARB 650V 35A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	S3D35065D1

Capacitance @ Vr, F	2000 pF
Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	45 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Mounting Type
SMC Diode Solutions S3D35065D1	TO-247-3	175 ░C	-55 C	No Recovery Time	1.7 V	35 A	TO-247AD	0 ns	2000 pF	650 V	SiC (Silicon Carbide) Schottky	45 µA	Through Hole

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General part information

Diode 650 V 35A Through Hole TO-247AD

Technical documentation and resources