Specification	NTMFS3D5N08XT1G

Current - Continuous Drain (Id) @ 25°C	135 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max) [Max]	119 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

NTMFS3D5N08X Series

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 3.0mΩ, 135 A

Part	Power Dissipation (Max) [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Supplier Device Package
ON Semiconductor NTMFS3D5N08XT1G	119 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	135 A	Surface Mount	N-Channel	80 V	20 V	38 nC	8-PowerTDFN 5 Leads	3.6 V	3 mOhm	6 V 10 V	5-DFN (5x6)	8-SOFL

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 3.0mΩ, 135 A

Technical documentation and resources