Specification	ZXMP7A17KTC

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	70 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	635 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.11 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

ZXMP7A17GQ Series

70V P-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Grade	Qualification	Power Dissipation (Max) [Max]
Diodes Inc ZXMP7A17KTC	635 pF	70 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.11 W	160 mOhm	-55 °C	150 °C	20 V	Surface Mount	18 nC	P-Channel	3.8 A	4.5 V 10 V	MOSFET (Metal Oxide)	TO-252-3	1 V
Diodes Inc ZXMP7A17KQTC	635 pF	70 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.11 W	160 mOhm	-55 °C	150 °C	20 V	Surface Mount	18 nC	P-Channel	3.8 A	4.5 V 10 V	MOSFET (Metal Oxide)	TO-252-3	1 V
Diodes Inc ZXMP7A17GQTC	635 pF	70 V	TO-261-4 TO-261AA		160 mOhm	-55 °C	150 °C	20 V	Surface Mount	18 nC	P-Channel	2.6 A	4.5 V 10 V	MOSFET (Metal Oxide)	SOT-223-3	1 V	Automotive	AEC-Q101	2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.64
		10	$ 0.56
		100	$ 0.39
		500	$ 0.32
		1000	$ 0.30
	Digi-Reel®	1	$ 0.64
		10	$ 0.56
		100	$ 0.39
		500	$ 0.32
		1000	$ 0.30
	Tape & Reel (TR)	2500	$ 0.30

Description

General part information

ZXMP7A17GQ Series

This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.