Specification	FDMC2610

Current - Continuous Drain (Id) @ 25°C	2.2 A, 9.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	42 W, 2.1 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDMC2610 Series

N-Channel UltraFET Trench<sup>®</sup> MOSFET 200V, 9.5A, 200mΩ

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor FDMC2610	20 V	4 V	8-MLP (3.3x3.3)	6 V 10 V	Surface Mount	2.1 W 42 W	200 V	18 nC	2.2 A 9.5 A	N-Channel	MOSFET (Metal Oxide)	200 mOhm	-55 °C	150 °C	8-PowerWDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.

Technical documentation and resources