Discrete Semiconductor Products
FDMS8027S
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 22A, 5.0MΩ
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Discrete Semiconductor Products
FDMS8027S
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 22A, 5.0MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS8027S |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A, 18 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1815 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 36 W, 2.5 W |
| Rds On (Max) @ Id, Vgs | 5 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 347 | $ 0.87 | |
| 347 | $ 0.87 | |||
| Cut Tape (CT) | 1 | $ 2.53 | ||
| 1 | $ 2.53 | |||
| 10 | $ 1.63 | |||
| 10 | $ 1.63 | |||
| 100 | $ 1.12 | |||
| 100 | $ 1.12 | |||
| 500 | $ 0.90 | |||
| 500 | $ 0.90 | |||
| 1000 | $ 0.83 | |||
| 1000 | $ 0.83 | |||
| Digi-Reel® | 1 | $ 2.53 | ||
| 1 | $ 2.53 | |||
| 10 | $ 1.63 | |||
| 10 | $ 1.63 | |||
| 100 | $ 1.12 | |||
| 100 | $ 1.12 | |||
| 500 | $ 0.90 | |||
| 500 | $ 0.90 | |||
| 1000 | $ 0.83 | |||
| 1000 | $ 0.83 | |||
| Tape & Reel (TR) | 3000 | $ 0.75 | ||
| 3000 | $ 0.75 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.95 | |
| 6000 | $ 0.90 | |||
| 12000 | $ 0.81 | |||
| 18000 | $ 0.78 | |||
| 30000 | $ 0.75 | |||
| ON Semiconductor | N/A | 1 | $ 0.23 | |
Description
General part information
FDMS8027S Series
The FDMS8027S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Documents
Technical documentation and resources